| ‘g % vS-150EBU047 www'V'Shay'C°m Vishay SemiconductorsUltrafast Soft Recovery Diode, 150 A FRED Pt? FEATURES ' Ultrafast recoverytime ? 0 175 °C max. operating junction temperature Pm‘ A 0 Screw mounting only @ Camode Anode O ‘?:;i|g3ejESS?c; qualified according to ROHS ~\ A Ham) .' . . COMP”... \\ /A‘/\ O Compliant to ROHS Directive 2002/95/EC \ O PowerTab? package PowerTab? BENEFITS - Reduced RFI and EMI 0 Higher frequency operation 0 Reduced snubbing PRooucT SUMMARY . Reduced pans count Package n DESCRIPTION/APPLICATIONSThese diodes are optimized to reduce losses and EMI/RFI inhigh frequency power conditioning systems.The softness of the recovery eliminates the need for a Seerecoverytable snubber in most applications. These devices are ideally suited for HF welding. power converters and other applications where switching losses are not significant Diode variation Single die portion of the total losses. ABSOLUTE MAxIMuM RATINGS PARAMETER TEST CONDITIONS Cathode to anode voltage Continuous forward current TC : 104 no Maximum repetitive fonNard current Square wave, 20 kHzELEcTRIcAL SPEC ATioNS (TJ 5 °c unless otherwise specified) Operating junction and storage temperatures singlepuiserorwardcurrent E PARAMETER TEST CONDITIONS Breakdown voltage, I : 200 AVR : VR rated blocking voltage R H Reverse leakage currentTJ : 150 “C, VR : VR rated Junction capacitance VR : 400 V Forward voitage IF :15o A, T J : 175 cc IF : 150 A,TJ : 125 °CMeasured lead to lead 5 mm from package body Series inductanceRevision: 16-Jun-11 1 Document Number: 93003 For technical questions within your region: DiodesAmericas@vishay.oom, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.c9m/doc?91o00 |